Description
The Samsung MZ-VAP1T0 SSD, with 1 TB capacity and M.2 2280 form factor, offers read speeds of up to 14700 MB/s and write speeds of up to 13300 MB/s via the PCI Express 5.0 interface and NVMe 2.0 controller. This model uses V-NAND TLC memory and achieves up to 1850000 IOPS in random read and 2600000 in random write, with a mean time between failures of 1500000 hours. It incorporates hardware encryption with a 256-bit AES algorithm, as well as support for S.M.A.R.T., TRIM, and DevSleep, being compatible with both PCs and gaming consoles. Its four-lane PCI Express x4 design ensures high performance for intensive workloads.
Specifications
Features
- NVMe version: 2.0
- Security algorithms: 256-bit AES
- SSD capacity: 1 TB
- SSD form factor: M.2
- Interface: PCI Express 5.0
- NVMe: Yes
- Memory type: V-NAND TLC
- Component for: PC/Game console
- Hardware encryption: Yes
- M.2 SSD size: 2280 (22 x 80 mm)
- Read speed: 14700 MB/s
- Write speed: 13300 MB/s
- Random read (4KB): 1850000 IOPS
- Random write (4KB): 2600000 IOPS
- PCI Express interface data lanes: x4
- DevSlp (device sleep) support: Yes
- S.M.A.R.T. support: Yes
- TRIM support: Yes
- Mean time between failures (MTBF): 1500000 h
Power
- Average power consumption (write): 7.2 W
- Operating voltage: 3.3 V
- Average power consumption (read): 7.6 W
Weight & dimensions
- Width: 80.2 mm
- Depth: 2.38 mm
- Height: 22.1 mm
- Weight: 9 g
Packaging data
- Package type: Box
Operational conditions
- Operating temperature (T-T): 0 - 70 °C
- Operating shock: 1500 G
Other features
- Warranty period: 5 year(s)
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