Description
The Samsung MZ-VAP4T0 is a 4 TB SSD with M.2 form factor and V-NAND TLC memory type, designed for PC and laptop. It connects via PCI Express 5.0 interface with x4 lanes and NVMe protocol, and reaches a read speed of 14800 MB/s and a write speed of 13400 MB/s, with 2200000 IOPS in 4KB random read and 2600000 IOPS in 4KB random write. Its operating voltage is 3.3 V, it weighs 9 g and measures 80.2 x 22.1 x 2.38 mm. It incorporates hardware encryption with supported security algorithms of 256-bit AES and supports S.M.A.R.T., TRIM and the DevSleep function. Its mean time between failures is 1500000 h.
Specifications
Features
- Random read (4KB): 2200000 IOPS
- Random write (4KB): 2600000 IOPS
- S.M.A.R.T. support: Yes
- TRIM support: Yes
- Mean time between failures (MTBF): 1500000 h
- Security algorithms: 256-bit AES
- SSD capacity: 4 TB
- SSD form factor: M.2
- PCI Express interface data lanes: x4
- Interface: PCI Express 5.0
- DevSlp (device sleep) support: Yes
- NVMe: Yes
- Memory type: V-NAND TLC
- Component for: PC/Laptop
- Hardware encryption: Yes
- Read speed: 14800 MB/s
- Write speed: 13400 MB/s
Power
- Operating voltage: 3.3 V
- Average power consumption (read): 9 W
- Average power consumption (write): 8.2 W
Weight & dimensions
- Width: 80.2 mm
- Depth: 2.38 mm
- Height: 22.1 mm
- Weight: 9 g
Packaging data
- Package type: Box
Operational conditions
- Operating temperature (T-T): 0 - 70 °C
- Operating shock: 1500 G
Other features
- Warranty period: 5 year(s)
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