Description
Samsung 990 2 TB SSD drive in M.2 format with PCI Express 4.0 interface and V-NAND memory. It reaches a read speed of 7250 MB/s and a write speed of 6450 MB/s, with random read of 850000 IOPS and random write of 1200000 IOPS. It incorporates NVMe version 2.0 over four PCI Express x4 lanes and CEM 4.0 revision. Its drive size is 2280, 22 x 80 mm, with power consumption of 4.3 W in read, 3.8 W in write, 0.055 W in standby and 3 mW in DevSlp mode, at an operating voltage of 3.3 V. It supports 256-bit AES and TCG Opal 2.0 security algorithms, and is intended for PC. Its mean time between failures is 1500000 hours, with dimensions of 80.2 mm in width, 22.1 mm in height and 2.38 mm in depth.
Specifications
Features
- NVMe version: 2.0
- Security algorithms: 256-bit AES, TCG Opal 2.0
- SSD capacity: 2 TB
- SSD form factor: M.2
- Interface: PCI Express 4.0
- NVMe: Yes
- Memory type: V-NAND
- Component for: PC
- Hardware encryption: Yes
- M.2 SSD size: 2280 (22 x 80 mm)
- Read speed: 7250 MB/s
- Write speed: 6450 MB/s
- Random read (4KB): 850000 IOPS
- Random write (4KB): 1200000 IOPS
- PCI Express interface data lanes: x4
- DevSlp (device sleep) support: Yes
- PCI Express CEM revision: 4.0
- S.M.A.R.T. support: Yes
- TRIM support: Yes
- Mean time between failures (MTBF): 1500000 h
Power
- Operating voltage: 3.3 V
- Power consumption (read): 4.3 W
- Power consumption (write): 3.8 W
- Power consumption (idle): 0.055 W
- Power consumption DevSlp (device sleep): 3 mW
Weight & dimensions
- Width: 80.2 mm
- Depth: 2.38 mm
- Height: 22.1 mm
Packaging data
- Package type: Box
Operational conditions
- Operating temperature (T-T): 0 - 70 °C
- Operating shock: 1500 G
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